Heating NPN
Simple NPN BJT according to Ebers-Moll with heating port
Description
Equations
Connections
Parameters
Modelica Standard Library
The Heating NPN component is a simple Ebers-Moll model of a bipolar NPN junction transistor with temperature dependency.
An optional heatport can be used to connect the device to a heatsink.
Tint={TheatPortUse Heat PortTotherwise
iB=iBEβFT+iBCβRT+CBC⁢v.BC+CBE⁢v.BE
iC=iBE−iBC⁢qBK−iBCβRT−CBC⁢v.BC+CCS⁢v.C
CCJC={CJC⁢1+MC⁢vBCφC0<vBCφCCJC⁢pow⁡1−vBCφC,−MCotherwise
CCJE={CJE⁢1+ME⁢vBEφE0<vBEφECJE⁢pow⁡1−vBEφE,−MEotherwise
iE=−iB−iC+CCS⁢v.C
Exmax=exp⁡Emax
Exmin=exp⁡Emin
βFT=βF⁢pow⁡TintTnom,XTB
βRT=βR⁢pow⁡TintTnom,XTB
CBC={τR⁢ISTNR⁢VT⁢Exmin⁢vBCNR⁢VT−Emin+1+CCJCvBCNR⁢VT<EminτR⁢ISTNR⁢VT⁢Exmax⁢vBCNR⁢VT−Emax+1+CCJCEmax<vBCNR⁢VTτR⁢ISTNR⁢VT⁢exp⁡vBCNR⁢VT+CCJCotherwise
CBE={τF⁢ISTNF⁢VT⁢Exmin⁢vBENF⁢VT−Emin+1+CCJEvBENF⁢VT<EminτF⁢ISTNF⁢VT⁢Exmax⁢vBENF⁢VT−Emax+1+CCJEEmax<vBENF⁢VTτF⁢ISTNF⁢VT⁢exp⁡vBENF⁢VT+CCJEotherwise
hexp=TintTnom−1⁢EGVT
iBC={IST⁢Exmin⁢vBCNR⁢VT−Emin+1−1+vBC⁢GBCvBCNR⁢VT<EminIST⁢Exmax⁢vBCNR⁢VT−Emax+1−1+vBC⁢GBCEmax<vBCNR⁢VTIST⁢exp⁡vBCNR⁢VT−1+vBC⁢GBCotherwise
iBE={IST⁢Exmin⁢vBENF⁢VT−Emin+1−1+vBE⁢GBEvBENF⁢VT<EminIST⁢Exmax⁢vBENF⁢VT−Emax+1−1+vBE⁢GBEEmax<vBENF⁢VTIST⁢exp⁡vBENF⁢VT−1+vBE⁢GBEotherwise
IST=IS⁢pow⁡TintTnom,XTI⁢htempexp
qBK=−Vak⁢vBC+1
vBC=vB−vC
vBE=vB−vE
VT=Kq⁢Tint
LossPower=vBC⁢iBCβRT+vBE⁢iBEβFT+iBE−iBC⁢qBK⁢vC−vE
htempexp={Exmin⁢hexp−Emin+1hexp<EminExmax⁢hexp−Emax+1Emax<hexpexp⁡hexpotherwise
Name
Modelica ID
C
Collector
B
Base
E
Emitter
Heat Port
Conditional heat port
heatPort
Default
Units
βF
50
1
Forward beta
Bf
βR
0.1
Reverse beta
Br
IS
1·10−16
A
Transport saturation current
Is
VAK
0.02
1V
Early voltage (inverse)
Vak
τF
1.2·10−10
s
Ideal forward transit time
Tauf
τR
5·10−9
Ideal reverse transit time
Taur
CCS
1·10−12
F
Collector-substrate capacitance
Ccs
CJE
4·10−13
Base-emitter zero bias depletion capacitance
Cje
CJC
5·10−13
Base-coll. zero bias depletion capacitance
Cjc
φE
0.8
V
Base-emitter diffusion voltage
Phie
Me
0.4
Base-emitter gradation exponent
φC
Base-collector diffusion voltage
Phic
Mc
0.333
Base-collector gradation exponent
GBC
1·10−15
S
Base-collector conductance
Gbc
GBE
Base-emitter conductance
Gbe
Emin
−100
if x<Emin, exp⁡x is linearized
EMin
Emax
40
if x>Emax, exp⁡x is linearized
EMax
Tnom
300.15
K
Parameter measurement temperature
XTI
3
Temperature exponent for effect on Is
XTB
0
Forward and reverse beta temperature exponent
EG
1.11
Energy gap for temperature effect on Is
NF
Forward current emission coefficient
NR
Reverse current emission coefficient
T
293.15
Fixed device temperature if Use Heat Port is false
Use Heat Port
false
True (checked) means heat port is enabled
useHeatPort
The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.
See Also
Analog Components
Bipolar Junction Transistors
Electrical Library
Download Help Document