Heating PNP - MapleSim Help
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Heating PNP

Simple PNP BJT according to Ebers-Moll with heating port

 

Description

Equations

Connections

Parameters

Modelica Standard Library

Description

The Heating PNP component is a simple Ebers-Moll model of a bipolar PNP junction transistor with temperature dependency.

An optional heatport can be used to connect the device to a heatsink.

Equations

Tint={TheatPortUse Heat PortTotherwise

iB=iEBβFTiCBβRTCEBv.EBCCBv.CB

iC=iCBβRT+CCBv.CB+CCSv.C+iCBiEBqBK

CCJC&equals;{CJC1&plus;MCvCBΦC0<vCBΦCCJCpow1vCBΦC&comma;MCotherwise

CCJE&equals;{CJE1&plus;MEvEBΦE0<vEBΦECJEpow1vEBΦE&comma;MEotherwise

iE&equals;iBiC&plus;CCSv&period;C

Exmax&equals;expEmax

Exmin&equals;expEmin

βFT&equals;βFpowTintTnom&comma;XTB

βRT&equals;βRpowTintTnom&comma;XTB

CCB&equals;CCJC&plus;ΤRISTNRVT{ExminvCBNRVTEmin&plus;1vCBNRVT<EminExmaxvCBNRVTEmax&plus;1Emax<vCBNRVTexpvCBNRVTotherwise

CEB&equals;CCJE&plus;ΤFISTNFVT{ExminvEBNFVTEmin&plus;1vEBNFVT<EminExmaxvEBNFVTEmax&plus;1Emax<vEBNFVTexpvEBNFVTotherwise

hexp&equals;TintTnom1EGVT

iCB&equals;vCBGBC&plus;IST{ExminvCBNRVTEmin&plus;11vCBNRVT<EminExmaxvCBNRVTEmax&plus;11Emax<vCBNRVTexpvCBNRVT1otherwise

iEB&equals;vEBGBE&plus;IST{ExminvEBNFVTEmin&plus;11vEBNFVT<EminExmaxvEBNFVTEmax&plus;11Emax<vEBNFVTexpvEBNFVT1otherwise

IST&equals;IspowTintTnom&comma;XTIhtempexp

qBK&equals;VakvCB&plus;1

vCB&equals;vCvB

vEB&equals;vEvB

VT&equals;KqTint

LossPower&equals;vCBiCBβRT&plus;vEBiEBβFT&plus;iCBiEBqBKvCvE

htempexp&equals;{ExminhexpEmin&plus;1hexp<EminExmaxhexpEmax&plus;1Emax<hexpexphexpotherwise

Connections

Name

Description

Modelica ID

C

Collector

C

B

Base

B

E

Emitter

E

Heat Port

Conditional heat port

heatPort

Parameters

Name

Default

Units

Description

Modelica ID

βF

50

1

Forward beta

Bf

βR

0.1

1

Reverse beta

Br

IS

1·10−16

A

Transport saturation current

Is

VAK

0.02

1V

Early voltage (inverse)

Vak

τF

1.2·10−10

s

Ideal forward transit time

Tauf

τR

5·10−9

s

Ideal reverse transit time

Taur

CCS

1·10−12

F

Collector-substrate capacitance

Ccs

CJE

4·10−13

F

Base-emitter zero bias depletion capacitance

Cje

CJC

5·10−13

F

Base-coll. zero bias depletion capacitance

Cjc

φE

0.8

V

Base-emitter diffusion voltage

Phie

Me

0.4

1

Base-emitter gradation exponent

Me

φC

0.8

V

Base-collector diffusion voltage

Phic

Mc

0.333

1

Base-collector gradation exponent

Mc

GBC

1·10−15

S

Base-collector conductance

Gbc

GBE

1·10−15

S

Base-emitter conductance

Gbe

Emin

−100

1

if x<Emin, expx  is linearized

EMin

Emax

40

1

if x&gt;Emax, expx is linearized

EMax

Tnom

300.15

K

Parameter measurement temperature

Tnom

XTI

3

1

Temperature exponent for effect on Is

XTI

XTB

0

1

Forward and reverse beta temperature exponent

XTB

EG

1.11

V

Energy gap for temperature effect on Is

EG

NF

1

1

Forward current emission coefficient

NF

NR

1

1

Reverse current emission coefficient

NR

T

293.15

K

Fixed device temperature if Use Heat Port is false

T

Use Heat Port

false

 

True (checked) means heat port is enabled

useHeatPort

Modelica Standard Library

The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.

See Also

Analog Components

Bipolar Junction Transistors

Electrical Library