NMOS
Simple NMOS Transistor
Description
Equations
Variables
Connections
Parameters
Modelica Standard Library
The NMOS component is a simple model of an n-channel metal-oxide semiconductor FET. The model does not contain capacitances. A large drain-source resistance, RDS, is included to avoid numerical difficulties.
An optional heat port may be connected to a heatsink, however, the electrical parameters are not temperature dependent.
On-Resistance
When used as a switch, the on-resistance of the transistor is approximately
Ron≈1β⁢W/L⁢vGS−VT
where vGS is the applied gate-to-source voltage.
Because the default parameter values yield a relatively high on-resistance. the product β⁢W/L should be increased by several orders of magnitude when using this device in a high-power application.
iB=iG=0
iD=−iS={−iDvD<vSiDotherwise
iD=uDS⁢gDS+{0uGST≤0v⁢uDS⁢uGST−12⁢uDSuDS<uGST12⁢v⁢uGST2otherwise
gDS={1Rsmall−Rsmall<RDS<Rsmall1RDSotherwise
uBS={0uS<vBvB−uSotherwise
uD={vSvD<vSvDotherwise
uDS=uD−uS
uGST=K2⁢uBS+vG−VT−uS⁢K5
uS={vDvD<vSvSotherwise
v=β⁢W+dWL+dL
Tint={TheatPortUse Heat PortTotherwise
LossPower=iD⁢vD−vS
Name
Units
Modelica ID
LossPower
W
Loss power leaving component via HeatPort
TheatPort
K
Temperature of HeatPort
T_heatPort
D
Drain
G
Gate
S
Source
B
Bulk
Heat Port
Conditional heat port
heatPort
Default
2·10−5
m
Width of channel
L
6·10−6
Length of channel
β
4.1·10−5
AV2
Transconductance parameter
Beta
VT
0.8
V
Zero bias threshold voltage
Vt
K2
1.144
1
Bulk threshold parameter
K5
0.7311
Reduction of pinch-off region
dW
−2.5·10−6
Narrowing of channel
dL
−1.5·10−6
Shortening of channel
RDS
1·107
Ω
Drain-Source resistance
T
293.15
Fixed device temperature if the Use Heat Port parameter is set to false
Use Heat Port
false
True (checked) means heat port is enabled
useHeatPort
The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.
See Also
Analog Components
Electrical Library
MOSFET Transistors
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