Name

Default

Units

Description

Modelica ID

$V_{\mathrm{TO}}$

$\mathrm{-1}·{10}^{40}$

$V$

Zero-bias threshold voltage, default 0

VTO

$K_P$

$\mathrm{-1}·{10}^{40}$

$\frac{A}{V^2}$

Transconductance parameter, default 2e-5

KP

$\Gamma$

$\mathrm{-1}·{10}^{40}$

Bulk threshold parameter, default 0

GAMMA

$\Phi$

$\mathrm{-1}·{10}^{40}$

$V$

Surface potential, default 0.6

PHI

$\Lambda$

$0$

$\frac{1}{V}$

Channel-length modulation, default 0

LAMBDA

$R_{\mathrm{D}}$

$\mathrm{-1}·{10}^{40}$

$\mathrm{\Omega }$

Drain ohmic resistance, default 0

RD

$R_S$

$\mathrm{-1}·{10}^{40}$

$\mathrm{\Omega }$

Source ohmic resistance, default 0

RS

$C_{\mathrm{BD}}$

$\mathrm{-1}·{10}^{40}$

$F$

Zero-bias B-D junction capacitance, default 0

CBD

$C_{\mathrm{BS}}$

$\mathrm{-1}·{10}^{40}$

$F$

Zero-bias B-S junction capacitance, default 0

CBS

$I_S$

$1·{10}^{\mathrm{-14}}$

$A$

Bulk junction saturation current

IS

$P_B$

$\frac{4}{5}$

$V$

Bulk junction potential

PB

$C_{\mathrm{GSO}}$

$0$

$\frac{F}{m}$

Gate-source overlap capacitance per meter channel width

CGSO

$C_{\mathrm{GDO}}$

$0$

$\frac{F}{m}$

Gate-drain overlap capacitance per meter channel width

CGDO

$C_{\mathrm{GBO}}$

$0$

$\frac{F}{m}$

Gate-bulk overlap capacitance per meter channel width

CGBO

$R_{\mathrm{SH}}$

$0$

$\mathrm{\Omega }$

Drain and source diffusion sheet resistance

RSH

$C_J$

$0$

$\frac{F}{m^2}$

Zero-bias bulk junction bottom cap. per sq-meter of junction area

CJ

$M_J$

$\frac{1}{2}$

Bulk junction bottom grading coefficient

MJ

$C_{\mathrm{JSW}}$

$0$

$\frac{F}{m}$

Zero-bias junction sidewall cap. per meter of junction perimeter

CJSW

$M_{\mathrm{JSW}}$

$\cdot 33$

Bulk junction sidewall grading coefficient

MJSW

$J_S$

$0$

$\frac{A}{m^2}$

Bulk junction saturation current per sq-meter of junction area

JS

$\mathrm{TOX}$

$\mathrm{-1}·{10}^{40}$

$m$

Oxide thickness, default 1e-7

TOX

$N_{\mathrm{SUB}}$

$\mathrm{-1}·{10}^{40}$

Substrate doping, default 0

NSUB

$N_{\mathrm{SS}}$

$0$

$\frac{1}{{\mathrm{cm}}^2}$

Surface state density

NSS

$T_{\mathrm{PG}}$

$1$

Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate

TPG

$L_{\mathrm{D}}$

$0$

$m$

Lateral diffusion

LD

$U_{\mathrm{O}}$

$600$

$\frac{{\mathrm{cm}}^2}{Vs}$

Surface mobility

UO

$K_F$

$0$

Flicker noise coefficient

KF

$A_F$

$1$

Flicker noise exponent

AF

$F_C$

$\frac{1}{2}$

Coefficient for forward-bias depletion capacitance formula

FC

$T_{\mathrm{NOM}}$

$27$

$\mathrm{\°C}$

Parameter measurement temperature, default 27

TNOM

$N_{\mathrm{FS}}$

$0$

$\frac{1}{{\mathrm{cm}}^2}$

Fast surface state density

NFS

$X_J$

$0$

$m$

Metallurgical junction depth

XJ

$U_{\mathrm{CRIT}}$

$1·{10}^4$

$\frac{V}{\mathrm{cm}}$

Critical field for mobility degradation (MOS2 only)

UCRIT

$U_{\mathrm{EXP}}$

$0$

Critical field exponent in mobility degradation (MOS2 only)

UEXP

$V_{\mathrm{MAX}}$

$0$

$\frac{m}{s}$

Maximum drift velocity of carries

VMAX

$N_{\mathrm{EFF}}$

$1$

Total channel charge (fixed and mobile) coefficient (MOS2 only)

NEFF

$\mathrm{DELTA}$

$0$

Width effect on threshold voltage

DELTA