M_PMOS2
PMOS MOSFET device
Description
Connections
Parameters
Modelica Standard Library
The M_PMOS2 component models a P-channel MOSFET transistor using a level 2 Schichman-Hodges model.
The model card parameter specifies an M2_Card record that contains the common technology parameters for the class of mosfets.
Name
Modelica ID
G
gate node
D
drain node
S
source node
B
bulk node
Default
Units
L
1·10−4
m
Length
W
Width
AD
0
m2
Area of the drain diffusion
AS
Area of the source diffusion
PD
Perimeter of the drain junction
PS
Perimeter of the source junction
NRD
1
Number of squares of the drain diffusions
NRS
Number of squares of the source diffusions
ICVDS
−1·1040
V
Initial condition value (VDS, not implemented yet)
IC_VDS
ICVGS
Initial condition value (VGS, not implemented yet)
IC_VGS
ICVBS
Initial condition value (VBS, not implemented yet)
IC_VBS
UIC
false
Use initial conditions: true, if initial condition is used
T
27
°C
Operating temperature of the device
TEMP
model card
MOSFET modelcard
modelcard
The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.
See Also
Spice3 Overview
Spice3 Semiconductors
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