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M_PMOS2

PMOS MOSFET device

 

Description

Connections

Parameters

Modelica Standard Library

Description

The M_PMOS2 component models a P-channel MOSFET transistor using a level 2 Schichman-Hodges model.

The model card parameter specifies an M2_Card record that contains the common technology parameters for the class of mosfets.

Connections

Name

Description

Modelica ID

G

gate node

G

D

drain node

D

S

source node

S

B

bulk node

B

Parameters

Name

Default

Units

Description

Modelica ID

L

1·10−4

m

Length

L

W

1·10−4

m

Width

W

AD

0

m2

Area of the drain diffusion

AD

AS

0

m2

Area of the source diffusion

AS

PD

0

m

Perimeter of the drain junction

PD

PS

0

m

Perimeter of the source junction

PS

NRD

1

 

Number of squares of the drain diffusions

NRD

NRS

1

 

Number of squares of the source diffusions

NRS

ICVDS

−1·1040

V

Initial condition value (VDS, not implemented yet)

IC_VDS

ICVGS

−1·1040

V

Initial condition value (VGS, not implemented yet)

IC_VGS

ICVBS

−1·1040

V

Initial condition value (VBS, not implemented yet)

IC_VBS

UIC

false

 

Use initial conditions: true, if initial condition is used

UIC

T

27

°C

Operating temperature of the device

TEMP

model card

 

 

MOSFET modelcard

modelcard

Modelica Standard Library

The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.

See Also

Spice3 Overview

Spice3 Semiconductors